Contents
Why IGBT fails in inverter?
Inverter shoot-through. This can be caused by the incorrect turn-on of both IGBTs in one of the inverter legs, which in turn can result from electromagnetic interference or a malfunction in the controller. It could also be caused by wearout/failure of one of the IGBTs in the leg while the healthy IGBT keeps switching.
What is a half bridge IGBT?
A half-bridge module is equipped with just two IGBTs and two freewheeling diodes, which usually have 600 V, 1200 V or 1700 V blocking voltage capability. The IGBTs and diodes often share the same current rating. Nearly all modules are equipped with an NTC or PTC alongside the power semiconductors.
What causes the failure of an IGBT device?
IGBT in the use of the main reasons for the failure of the following conditions: 1.Over current damage IGBT has a certain anti over current capacity, but must pay attention to prevent the current damage. IGBT composite device has a parasitic thyristor, so has the latching effect.
How to limit the flow of IGBT current?
Due to each IGBT based UPS load impact characteristic is not identical, and powered devices may occur short circuit fault, so take measures to limit the flow of IGBT current in the UPS design is necessary, consider using driving thick film circuit provided by IGBT manufacturers.
What causes the latching effect on an IGBT?
After the latching effect occur, the drain current cause excessive high power consumption, and finally lead to the damage of the device. In order to avoid the IGBT happens latching effect and damage, the circuit design should ensure the IGBT maximum working current should not exceeding the IDM value of the IGBT.
What is the negative bias voltage of an IGBT?
In a negative bias voltage, the driving voltage is between 10 and 15V, and the drain current is 4 to 10 times higher than the rated current in the 5~10μs, so the driver IGBT must be designed with a negative bias voltage.