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What is the importance of subthreshold swing?
The subthreshold swing is an important parameter in modeling the weak inversion regime, especially for high-gain analog applications, imaging circuits, and low-voltage applications.
What is the ideal subthreshold slope at room temperature?
Its slope is the subthreshold slope. (known as thermionic limit) and 60 mV/dec at room temperature (300 K). A typical experimental subthreshold swing for a scaled MOSFET at room temperature is ~70 mV/dec, slightly degraded due to short-channel MOSFET parasitics.
What is subthreshold condition?
Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.
When do you need a subthreshold swing s?
You want a very small subthreshold swing S, i.e. you want that for a decade variation in the drain current a very small Vgs variation is required. In conventional (i.e. non tunnel-based) FETs, S has the lower limit set to 60mV/dec (at room temperature, 300 K), because it is a diffusion limited process.
What does the sub threshold swing of a MOSFET actually mean?
I have found several interpretations of the sub threshold swing.One is ” The subthreshold swing of a device is defined as the change in gate voltage which must be applied in order to create a one decade increase in the output current “.
Which is the inverse of the subthreshold swing?
Subthreshold swing is also the inverse of the subthreshold slope. On a graph of Ids (Vgs) with logarithmic (base 10) axis for Ids the subthreshold slope is found as the straight-line approximation of the subthreshold current, normally expressed in units of decades/mV.
What is the subthreshold slope at room temperature?
(known as thermionic limit) and 60 mV/dec at room temperature (300 K). A typical experimental subthreshold swing for a scaled MOSFET at room temperature is ~70 mV/dec, slightly degraded due to short-channel MOSFET parasitics. A dec (decade) corresponds to a 10 times increase of the drain current ID .