Is Shockley diode and Schottky diode same?

Is Shockley diode and Schottky diode same?

Shockley is two PN junction of semiconductors coupled diode where as Schottky diode in metal-semiconductor junction diode. Shockley operates as power, switching device and inorganic solar cell. Schottky diode is operate as signalling and rectifying device.

What is in Shockley equation?

n is the ideality factor, also known as the quality factor or sometimes emission coefficient. The equation is called the Shockley ideal diode equation when n, the ideality factor, is set equal to 1. The reverse breakdown region is not modeled by the Shockley diode equation.

Is the Schottky diode the same as the Shockley diode?

Not to be confused with Shockley diode. The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action.

Is the reverse breakdown region modeled by the Shockley diode equation?

The reverse breakdown region is not modeled by the Shockley diode equation. For even rather small forward bias voltages the exponential is very large, since the thermal voltage is very small in comparison. The subtracted ‘1’ in the diode equation is then negligible and the forward diode current can be approximated by

Why is the ideality factor added to the diode equation?

The ideality factor n typically varies from 1 to 2 (though can in some cases be higher), depending on the fabrication process and semiconductor material and is set equal to 1 for the case of an “ideal” diode (thus the n is sometimes omitted). The ideality factor was added to account for imperfect junctions as observed in real transistors.

How does Shockley calculate the total voltage drop?

To derive his equation for the voltage, Shockley argues that the total voltage drop can be divided into three parts: the drop of the quasi-Fermi level of holes from the level of the applied voltage at the p terminal to its value at the point where doping is neutral (which we may call the junction)