What is the CMOS inverter?

What is the CMOS inverter?

A standard CMOS inverter is quite simple and is built using two opposite-polarity MOSFETs in a complementary manner. The circuit gives a large output voltage swing and only dissipates significant power when the input is switched; these are two important properties of CMOS logic circuits.

Which are the properties of a CMOS inverter?

CMOS inverter configuration is called Complementary MOS (CMOS).

  • That is for high input, the nMOS transistor drives (pulls down) the output node while the pMOS transistor acts as the load, and for low input the pMOS transistor drives (pulls up) the output node while the nMOS transistor acts as the load.
  • What are the characteristics of a CMOS inverter?

    They operate with very little power loss and at relatively high speed. Furthermore, the CMOS inverter has good logic buffer characteristics, in that, its noise margins in both low and high states are large. This short description of CMOS inverters gives a basic understanding of the how a CMOS inverter works.

    Why are CMOS inverters good for logic buffers?

    Furthermore, the CMOS inverter has good logic buffer characteristics, in that, its noise margins in both low and high states are large. This short description of CMOS inverters gives a basic understanding of the how a CMOS inverter works.

    What is the drain current of a nMOS inverter?

    The following graph shows the drain to source current (effectively the overall current of the inverter) of the NMOS as a function of input voltage. Note that the current in the far left and right regions (low and high VIN respectively) have low current, and the peak current in the middle is only .232mA (a 1.16mW power dissipation).

    How does a unstressed inverter transfer voltage?

    The voltage transfer characteristics of the unstressed inverter can be seen in Figure 7.14. The transition from the on to the off state is very well aligned around . NBT stress has its highest impact on the p-channel MOSFET during low input . At this condition the transistor has a gate to substrate voltage of approximately .