Contents
What kind of transistors come in the 2N7000 package?
BC170, 2N7002, IRFZ44 (The pin configurations of these transistors may be different from 2N7000, therefore check their pin configurations before replacing in your circuit). 2N7000 is a famous N Channel MOSFET comes in TO-92 package.
How to get long term performance from 2N7000 MOSFET?
To get long term performance from 2N7000 MOSFET do not apply voltage more than 60V through drain to source. Do not operate load more than 200mA. The Gate to Source voltage should be under ±20V and always operate and store the transistor in temperature above -55 Celsius and below +155 Celsius.
Can a p channel MOSFET be used as a high side switch?
Yet, despite its shortcomings, the p-channel MOSFET performs a vital ªhigh-sideº switch task that the n-channel simply cannot equal. Used as a high-side switch, a p-channel MOSFET in a totem-pole arrangement with an n-channel MOSFET will simulate a high-current, high-power CMOS (complementary MOS) arrangement.
Is there a popular small signal pFET equivalent?
ZVP3306A is not too bad a choice as a complimentary part to the 2N7000, rather cheaper (~30%) than the BS250, but it is still more than six times more expensive than the surface mount SOT-23 BSS84.
Which is the equivalent of the 2N7000 MOSFET?
2N7000 MOSFET. Datasheet pdf. Equivalent Maximum Drain-Source On-State Resistance (Rds): 5 Ohm MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7000/DTMOS FET Transistor2N7000N Channel EnhancementMotorola Preferred Device3 DRAIN2GATE1 SOURCEMAXIMUM RATINGS
How many VGS does a 2N7000 switch have?
Packaged in a TO-92 enclosure, both the 2N7000 and BS170 are 60 V devices. The 2N7000 can switch 200 mA. The BS170 can switch 500 mA, with a maximum on-resistance of 5 Ω at 10 V Vgs.
What is the maximum drain resistance of 2N7000?
Maximum Drain-Source On-State Resistance (Rds): 5 Ohm MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7000/DTMOS FET Transistor2N7000N Channel EnhancementMotorola Preferred Device3 DRAIN2GATE1 SOURCEMAXIMUM RATINGS 2N7000N-channel enhancement mode field-effect transistorRev. 03 19 May 2000 Product specification1.